Multifunctional ICP-PECVD silicon nitride layers for high-efficiency silicon solar cell applications

Silicon nitride layers can be deposited by a variety of methods leading to different physical characteristics, such as optical, electrical and mechanical properties. In photovoltaic applications highly hydrogenated (>20% H concentration) and transparent layers are necessary to passivate the surface (Seff <20 cm/s) while allowing for optimal internal quantum efficiency. Secondary properties, such as a low pinhole density (<100/mm2) and various barrier-functions for even very thin films (<20 nm) are useful in more complex solar cell processes. This work investigates high deposition rate (2-7 nm/s) PECVD SiNx:H layers from inductively-coupled plasma (ICP) technology. The ICP-technology is capable of creating a variety of such layers, or even only one layer, with all these properties for cost reduction of high-efficiency silicon solar cell processes. © 2015 The Authors. Published by Elsevier Ltd. Peer review by the scientific conference committee of SiliconPV 2015 under responsibility of PSE AG.